IPD90N10S406ATMA1 vs IAUC120N04S6N009ATMA1 比較

詳細並排比較 IPD90N10S406ATMA1 由 Infineon 與 IAUC120N04S6N009ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD90N10S406ATMA1 IPD90N10S406ATMA1 - 100V 90A N-Channel MOSFET | Infineon

IPD90N10S406ATMA1 - 100V 90A N-Channel MOSFET | Infineon

IPD90N10S406ATMA1 ✓ 啟用中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 啟用中

規格比較

參數 IPD90N10S406ATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD90N10S406ATMA1 —
Family / Series OptiMOS —
電晶體類型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) @ Tc=25°C 90 A —
Power Dissipation (Pd) @ Tc=25°C 136 W —
Gate Drive Level Normal Level (10 V typical Vgs) —
Avalanche Energy Rating (EAS) 250 mJ —
工作接面溫度 -55 °C to +175 °C -55 °C to +175 °C
Storage Temperature Range -55 °C to +175 °C —
封裝 / 外殼 PG-TO252-3-313 (DPAK) —
安裝類型 Surface Mount Surface Mount
腳位數 3 (Gate, Drain, Source) —
MSL 等級 MSL1 (260 °C peak reflow) 1
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Green Product (RoHS compliant) —
Built-in Body Diode Yes (single with built-in diode) —
Avalanche Tested 100% Avalanche tested —
Packaging Tape & Reel (Cut Tape / Reel options available) —
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脈衝汲極電流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
封裝 — PG-TDSON-8-33 (5x6 mm)
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

資料表與資源

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