IPD90N10S406ATMA1 vs IAUC120N04S6N009ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N10S406ATMA1 sa pamamagitan ng Infineon at IAUC120N04S6N009ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD90N10S406ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Uri ng Transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Packhaging / Kaso | PG-TO252-3-313 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Level ng MSL | MSL1 (260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Pulsed Drain Kuru-kuryente | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Packhaging | — | PG-TDSON-8-33 (5x6 mm) |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |