IPD90N10S406ATMA1 vs IAUC120N04S6N009ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD90N10S406ATMA1 tarafından Infineon ve IAUC120N04S6N009ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPD90N10S406ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Transistor Türü | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Paket / Kas | PG-TO252-3-313 (DPAK) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Sayısı | 3 (Gate, Drain, Source) | — |
| MSL Seviyesi | MSL1 (260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Pulsed Dræn Akımı | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Paket | — | PG-TDSON-8-33 (5x6 mm) |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |