IPD90P03P404ATMA2 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD90P03P404ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90P03P404ATMA2 IPD90P03P404ATMA2 - 30V P-Ch 90A 4.5mΞ© MOSFET | Infineon

IPD90P03P404ATMA2 - 30V P-Ch 90A 4.5mΞ© MOSFET | Infineon

IPD90P03P404ATMA2 βœ“ Active

Specification Comparison

Parameter IPD90P03P404ATMA2 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.49
Transistor Type P-Channel MOSFET β€”
Drain-Source Voltage (V(BR)DSS) -30 V β€”
Continuous Drain Current (ID) at TC -90 A β€”
On-State Resistance R DS(on) @ VGS = -10V 4.5 mΞ© (typical) β€”
Gate-Source Voltage (VGS) Rating Β±20 V β€”
Total Gate Charge (Qg) @ VGS = 10V 130 nC (typical) β€”
Input Capacitance (Ciss) @ VDS = 25V 10300 pF (typical) β€”
Power Dissipation (PD) at TC 137 W β€”
Operating Temperature Range -55Β°C to +175Β°C (TJ) β€”
Package PG-TO252-3-11 (DPAK / TO-252-3) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101
Technology OptiMOS trench N-Channel MOSFET (OptiMOS)
RoHS Status Compliant Compliant
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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