IPD90P03P404ATMA2 vs IPD50N06S409ATMA2 Vergleich
Detaillierter Direktvergleich von IPD90P03P404ATMA2 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD90P03P404ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,49 |
| Transistortyp | P-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | -30 V | — |
| Continuous Drain Current (ID) at TC | -90 A | — |
| On-State Resistance R DS(on) @ VGS = -10V | 4.5 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Rating | ±20 V | — |
| Total Gate Charge (Qg) @ VGS = 10V | 130 nC (typical) | — |
| Input Capacitance (Ciss) @ VDS = 25V | 10300 pF (typical) | — |
| Power Dissipation (PD) at TC | 137 W | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | — |
| Gehäuse | PG-TO252-3-11 (DPAK / TO-252-3) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Technology | OptiMOS trench | N-Channel MOSFET (OptiMOS) |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |