IPG20N04S4L08AATMA1 vs IAUCN04S7L042GATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N04S4L08AATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPG20N04S4L08AATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | — |
| Technology | OptiMOS-T2 (Logic Level) | Trench N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| On-Resistance R<sub>DS(on)</sub> max @ VGS=10V | 8.2 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> typ | 1.7 V | — |
| Gate Drive (Logic Level) | 4.5 V | — |
| Power Dissipation (PD) @ TC=25°C | 54 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8-10 (Wettable Flank) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| AEC-Q101 Qualification | Yes | — |
| Peak Reflow Temperature | 260°C | — |
| Avalanche Rated | Yes (100% tested) | — |
| RoHS / REACH | Compliant (Green Product) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Rentang Suhu Kerja | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |