IPG20N04S4L08AATMA1 vs IAUCN04S7L042GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N04S4L08AATMA1 sa pamamagitan ng Infineon at IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon
IPG20N04S4L08AATMA1 ✓ NakahandaInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPG20N04S4L08AATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | Dual N-Channel | — |
| Technology | OptiMOS-T2 (Logic Level) | Trench N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| On-Resistance R<sub>DS(on)</sub> max @ VGS=10V | 8.2 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> typ | 1.7 V | — |
| Gate Drive (Logic Level) | 4.5 V | — |
| Power Dissipation (PD) @ TC=25°C | 54 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TDSON-8-10 (Wettable Flank) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| AEC-Q101 Qualification | Yes | — |
| Peak Reflow Temperature | 260°C | — |
| Avalanche Rated | Yes (100% tested) | — |
| RoHS / REACH | Compliant (Green Product) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |