IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
MPN: IPG20N04S4L08ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
Drop-in alternatives for IPG20N04S4L08ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPG20N04S4L-07AATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPG20N04S4L-10ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPG20N04S4L08AATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPG20N04S4-08ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
NVMFD5C470NL
✅ Drop-In📋 Reference alternative (not in catalog)
IPG20N04S4L08ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPG20N04S4L08ATMA1 |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ 25°C | 20 A |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ |
| Power Dissipation (Pd) | 54 W |
| Operating Temperature | -55°C to +175°C |
| Package / Case | PG-TDSON-8-4 (TDSON-8) |
| Mounting Type | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Avalanche Tested | 100% Avalanche Tested |
| RoHS / Green | RoHS Compliant, Green Product |
| Part Status | Active |
IPG20N04S4L08ATMA1 Pin Configuration
| Pin 1 | S1 — Source 1 (low-side switch 1) |
| Pin 2 | S1 — Source 1 (low-side switch 1) |
| Pin 3 | S1 — Source 1 (low-side switch 1) |
| Pin 4 | G1 — Gate 1 (logic-level input) |
| Pin 5 | G2 — Gate 2 (logic-level input) |
| Pin 6 | S2 — Source 2 (low-side switch 2) |
| Pin 7 | S2 — Source 2 (low-side switch 2) |
| Pin 8 | S2 — Source 2 (low-side switch 2) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPG20N04S4L08ATMA1 is suitable for 6 applications: Automotive ECU Power Stage, Brushless DC (BLDC) Motor Driver Half-Bridge, Solenoid and Valve Driver, Synchronous Rectification in DC-DC Converters, LED Lighting Driver (Automotive), Battery Management System (BMS) Protection.
Automotive ECU Power Stage
The IPG20N04S4L08ATMA1 suits 12 V automotive ECU power stages because of its AEC-Q101 qualification, 40 V Vdss for load-dump headroom, and 20 A continuous current per channel. Its dual topology provides two switches in one PG-TDSON-8-4 footprint, allowing designers to replace multiple DPAK packages and shrink the ECU PCB. With 8.2 mΩ max Rds(on) at 10 V VGS, conduction losses stay low across typical 5-15 A ECU loads. Logic-level gate drive enables direct connection to 5 V microcontrollers without external gate drivers, simplifying BOM and reducing quiescent draw on standby rails.
Recommended
Brushless DC (BLDC) Motor Driver Half-Bridge
In BLDC motor drivers, the IPG20N04S4L08ATMA1 provides one high-side and one low-side switch per phase in a single PG-TDSON-8-4 package, so three parts form a complete three-phase inverter. The matched RDs(on) and Qg between channels ensure symmetric switching, which is critical to minimize torque ripple and acoustic noise. The 20 A continuous rating comfortably handles motor currents up to ~15 A continuous with proper PCB thermal design, while 40 V Vdss tolerates 12 V battery transients including load-dump pulses. Logic-level gate threshold simplifies gate-driver selection for 5 V or 3.3 V MCU PWM outputs.
Recommended
Solenoid and Valve Driver
The IPG20N04S4L08ATMA1 drives automotive solenoids, transmission valves, and fuel injectors efficiently thanks to its low 8.2 mΩ Rds(on) and 20 A continuous current per channel. Two channels per package allow dual-solenoid drive in a compact module, halving PCB area compared to two discrete DPAK parts. Logic-level gates accept direct drive from ECU microcontrollers, eliminating gate-driver stages for simple on/off solenoid control. AEC-Q101 qualification and 175°C max junction temperature ensure reliability under the thermal stress of under-hood transmission and engine-bay mounting.
Recommended
Synchronous Rectification in DC-DC Converters
In 12 V-to-low-voltage buck converters, the IPG20N04S4L08ATMA1 serves as a synchronous rectifier pair, replacing Schottky diodes to cut conduction losses by half and improve efficiency 2-4% at full load. The 40 V rating provides ample headroom for 12 V battery transients, while 8.2 mΩ Rds(on) at 10 V VGS keeps synchronous-rectifier conduction losses low at 5-15 A loads. The dual-die topology halves the loop inductance between high-side and low-side switches, reducing switching ringing and EMI. Logic-level gates simplify low-voltage converter designs operating from a 5 V bias rail.
Recommended
LED Lighting Driver (Automotive)
The IPG20N04S4L08ATMA1 drives high-brightness automotive LED headlights, daytime running lights, and interior lighting modules. Its dual N-channel topology enables buck or boost LED-driver topologies where two switches manage current regulation. With 20 A current handling and 8.2 mΩ Rds(on), it dissipates minimal power even at high LED string currents, reducing thermal stress and eliminating bulky heatsinks. AEC-Q101 qualification and 175°C max junction temperature are critical for sealed headlamp modules where ambient temperatures exceed 100°C and reliability must match vehicle lifetime.
Recommended
Battery Management System (BMS) Protection
The IPG20N04S4L08ATMA1 is well suited for BMS protection FETs in 12 V and 24 V battery packs, providing dual N-channel switches for charge and discharge paths in one PG-TDSON-8-4 footprint. The 40 V Vdss comfortably exceeds the maximum pack voltage with margin for transients, and 8.2 mΩ Rds(on) minimizes voltage drop and self-heating during high-current charge/discharge cycles. AEC-Q101 qualification is essential for automotive battery applications. Logic-level gates allow direct drive from low-voltage BMS AFE chips, reducing gate-driver complexity and standby current.
Recommended
Recommended Products Summary
Engineering reference data for IPG20N04S4L08ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPG20N04S4L-07AATMA1 | IPG20N04S4L-10ATMA1 | IPG20N04S4L08AATMA1 | IPG20N04S4-08ATMA1 | NVMFD5C470NL |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 (DFN-8 equiv) - same |
| Drain-to-Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Id) @ 25°C | 20 A | 20 A | 20 A | 20 A | 20 A | [DATA_NEEDED] |
| Max On-Resistance Rds(on) @ Vgs=10V | 8.2 mΩ | ~7 mΩ (lower) | ~10 mΩ (higher) | 8.2 mΩ (identical) | ~8 mΩ | ~47 mΩ (much higher) |
| Gate Drive Level | Logic Level (4.5V-10V) | Logic Level | Logic Level | Logic Level | Standard Level (higher Vgs(th)) | Logic Level |
| AEC-Q101 Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Power Dissipation | 54 W | 54 W | 54 W | 54 W | 54 W | [DATA_NEEDED] |
Key Differentiators
- Dual N-channel in single PG-TDSON-8-4 footprint (vs Single-channel DPAK (e.g., IPD90N03S4L-04))
- AEC-Q101 automotive qualification (vs Industrial-grade NVMFS5C460NL (onsemi))
- Logic-level gate drive at 4.5V-10V VGS (vs Standard-level IPG20N04S4-08ATMA1)
Design Notes
At maximum continuous drain current of 20 A and Rds(on) of 8.2 mΩ, conduction losses reach approximately P = I² × R = 20² × 0.0082 = 3.28 W per channel, or 6.56 W for both channels. The PG-TDSON-8-4 exposed pad requires substantial copper pour underneath - at least 1 square inch on top layer plus thermal vias to inner planes - to keep junction temperature rise acceptable. Without adequate copper, theta_JA rises rapidly and the device may exceed its 175°C Tj max at high ambient temperatures. For continuous 20 A operation in sealed enclosures, parallel multiple parts or downgrade to the L-07 variant for lower Rds(on).
Place the IPG20N04S4L08ATMA1 so that the drain-exposed thermal pad connects to a continuous copper plane on the top layer with an array of thermal vias (typically 9-16 vias, 0.3 mm drill, 1 mm pitch) to inner ground/power planes. Keep gate-trace impedance low by using 0.2 mm traces with ground-side shielding. Source connections should use wide copper pours to minimize parasitic inductance in switching loops. For half-bridge layouts, place the high-side and low-side switches as close as possible to minimize the power-loop inductance, which directly impacts switching losses and EMI.
Do not exceed the absolute maximum gate-to-source voltage of ±20 V; even brief transients above this will damage the gate oxide. The logic-level gate variant (L08 suffix) is optimized for VGS = 4.5V-10V drive - if you need standard 10V-12V drive from a gate-driver IC, consider the non-logic-level variant (IPG20N04S4-08). Always verify the pinout of the dual-die device matches your schematic - source pins are grouped 1-2-3 and 6-7-8, while gates are on pins 4 and 5, and the exposed pad is the common drain for both MOSFETs.
For BLDC motor inverter layouts using three IPG20N04S4L08ATMA1 parts (one per phase), arrange them symmetrically around the motor connector with balanced trace lengths for all three phases. This minimizes phase-to-phase timing skew and reduces circulating currents. Use a star-ground topology from the DC-link bulk capacitors to the source pins of each part, rather than daisy-chained grounds, to prevent ground bounce from corrupting gate-drive signals. Add 10 kΩ gate-source pull-down resistors on each gate to prevent inadvertent turn-on during MCU reset or power-up sequences.
The fast switching edges of the IPG20N04S4L08ATMA1 (low Qg enables <20 ns rise times) can generate ringing and EMI if the gate-drive loop and power-loop inductances are not minimized. Use a gate-drive resistor (typically 10-47 Ω) to slow the rise/fall time and damp ringing, trading switching loss for EMI compliance. Place a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source of each MOSFET in noisy environments, and consider a TVS diode on the DC bus to clamp load-dump transients in automotive 12V systems.
Compliance Information
AEC-Q101 qualified (automotive grade). MSL1 per JEDEC J-STD-020 with peak reflow up to 260°C. RoHS compliant and Green Product per Infineon datasheet. Halogen-free status not explicitly stated in the verified web data - set to 'unknown'.
