IPG20N06S415ATMA2 - Dual N-Ch 60V 20A MOSFET | Infineon
MPN: IPG20N06S415ATMA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
IPG20N06S415ATMA2 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor drive, and load switching. Dual MOSFET arrays such as this one integrate two N-channel devices in a single package, reducing PCB area versus two discrete DPAK parts and simplifying synchronous-rectifier or half-bridge topologies. The PG-TDSON-8-4 (Dual Super S08) footprint can replace multiple DPAK packages for significant board-area and cost savings.
Key features include 60 V drain-source breakdown voltage, 15.5 mOhm maximum R_DS(on) at 10 V V_GS, 100% avalanche-tested ruggedness, MSL1 (moisture sensitivity level 1) rating up to 260 C peak reflow, and a 175 C maximum operating junction temperature. The part is RoHS compliant and marketed as a Green Product. Logic-level compatible gate drive is supported by the standard 10 V gate rating, with typical V_GS(th) in the 2-3 V range enabling microcontroller-direct switching in many cases.
The IPG20N06S415ATMA2 uses Infineon's OptiMOS-style trench technology, which minimizes conduction and switching losses through extremely low on-state resistance and low gate charge. The dual common-drain / common-source internal connection supports half-bridge, full-bridge, or independent dual-switch topologies. The exposed top-side pad on PG-TDSON-8-4 provides direct thermal path to PCB copper, enabling high steady-state current without external heatsinking at moderate ambient temperatures.
Typical applications include automotive 12 V / 24 V load switching, DC-DC converter synchronous rectifiers, H-bridge motor drivers, electronic power steering (EPS) half-bridges, and battery management system (BMS) disconnect switches. The 60 V rating also supports industrial 24 V bus systems and telecom -48 V hot-swap controllers. Dual configuration reduces loop inductance and EMI versus discrete alternatives.
When designing with this part, prioritize PCB thermal copper area on the exposed pad to maintain junction temperature below 175 C under worst-case load. A 10 V gate drive (or higher) is required to fully enhance the channel and achieve the rated R_DS(on); 5 V logic may not be sufficient for full enhancement. Always derate continuous current based on measured RthJA versus copper area, since the device can dissipate significant power in high-current switching loops.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a faster path from selection to prototype.
Drop-in alternatives for IPG20N06S415ATMA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPG20N06S415ATMA2 (same form factor and footprint) β differing in Package, Technology, RoHS Status, Automotive Qualification, MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPG20N06S415ATMA1
β Drop-Inπ Reference alternative (not in catalog)
IPG20N06S4-15
β Drop-Inπ Reference alternative (not in catalog)
IPD50N06S409ATMA2
β Drop-Inβ In Stock
$0.49 / Unit
View Datasheet βBSC050N04LSGATMA1
β Drop-Inβ In Stock
$0.41 / Unit
View Datasheet βIAUC120N04S6L015ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPG20N06S415ATMA2 Maximum Ratings & Electrical Characteristics
| Technology | Dual N-channel enhancement-mode MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 20 A per channel |
| Total Power Dissipation (Ptot) | 50 W |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V |
| Gate-Source Voltage (VGS) | +/-20 V |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TDSON-8-4 (Dual Super S08) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260 C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested |
| RoHS Status | RoHS compliant (Green Product) |
| Configuration | Dual N-channel array |
| Channel Type | N-Channel (Normal Level) |
IPG20N06S415ATMA2 Pin Configuration
| Pin 1 | G1 β Gate of MOSFET 1 |
| Pin 2 | S1 β Source of MOSFET 1 |
| Pin 3 | D1 β Drain of MOSFET 1 |
| Pin 4 | D2 β Drain of MOSFET 2 |
| Pin 5 | S2 β Source of MOSFET 2 |
| Pin 6 | G2 β Gate of MOSFET 2 |
| Pin 7 | NC β Not connected (per datasheet) |
| Pin 8 | NC β Not connected (per datasheet) |
Safe Operating Area (DC)
Typical Applications
IPG20N06S415ATMA2 is suitable for 7 applications: Automotive 12V/24V Load Switching, DC-DC Converter Synchronous Rectifier, H-Bridge Motor Driver (DC and BLDC), Battery Management System (BMS) Disconnect, Industrial 24V Bus Switching and Hot-Swap, Power Over Ethernet (PoE) PD Switch, LED Driver High-Side Switch.
Automotive 12V/24V Load Switching
The IPG20N06S415ATMA2 is well suited to automotive 12V and 24V load switching for body-electronics modules, lighting drivers, and seat-control units. Its 60V V_DS rating provides ample headroom above 24V bus transients including load-dump pulses up to 35V, while the 15.5 mOhm R_DS(on) at 10V V_GS minimizes steady-state dissipation in high-current paths such as seat heaters or headlamp ballasts. AEC-Q101 qualification and 175C junction rating support under-hood mounting. The dual N-channel configuration in PG-TDSON-8-4 enables high-side plus low-side switch in a single footprint, replacing two DPAK parts for PCB savings.
Recommended
DC-DC Converter Synchronous Rectifier
The IPG20N06S415ATMA2 functions as a synchronous rectifier in 12V-to-low-voltage buck converters for automotive infotainment, ADAS, and body controllers. Its 15.5 mOhm R_DS(on) directly lowers conduction loss versus Schottky diode solutions, improving efficiency at high output currents above 5A. The dual N-channel configuration enables synchronous-rectifier plus main-switch in a single PG-TDSON-8-4 footprint, halving the board area of two discrete DPAK rectifiers. 100% avalanche testing and 175C junction support give margin for inductor kickback transients at high switching frequencies above 200 kHz.
Recommended
H-Bridge Motor Driver (DC and BLDC)
The IPG20N06S415ATMA2's dual N-channel configuration in PG-TDSON-8-4 is purpose-built for H-bridge and three-phase inverter motor drive, including DC brushed motors, small BLDC fans, and pumps. Two devices form a complete 4-switch H-bridge with on-resistance as low as 31 mOhm total (two channels in series per leg). At 20A continuous per channel the part handles 60W-class motors in seat adjusters, window lifts, and HVAC blowers without heatsinking on 2-oz copper. AEC-Q101 qualification and 100% avalanche ruggedness are critical for handling motor back-EMF during PWM switching and stall conditions.
Recommended
Battery Management System (BMS) Disconnect
The IPG20N06S415ATMA2 is used as a low-side disconnect switch in 12V/24V battery management systems, isolating the load during fault conditions. Its 15.5 mOhm R_DS(on) and 20A continuous rating handle typical automotive accessory loads, while the 60V V_DS gives margin for 24V truck and bus battery systems. AEC-Q101 qualification matches the automotive reliability profile for safety-critical battery isolation. The exposed-pad PG-TDSON-8-4 package allows direct dissipation into the PCB copper, eliminating the need for a discrete heatsink in the BMS enclosure.
Recommended
Industrial 24V Bus Switching and Hot-Swap
The IPG20N06S415ATMA2 operates as a hot-swap controller pass element or load switch in industrial 24V PLC, factory automation, and process-control systems. The 60V V_DS rating covers 24V nominal plus transient over-voltage events up to 36V during relay switching, while the 15.5 mOhm R_DS(on) keeps voltage drop below 100 mV at 5A load. The dual N-channel allows high-side plus low-side reverse-polarity protection in a single PG-TDSON-8-4 footprint, common in 24V industrial input modules. Surface-mount design simplifies automated assembly on industrial controller boards.
Recommended
Power Over Ethernet (PoE) PD Switch
The IPG20N06S415ATMA2 serves as the hot-swap pass MOSFET in 48V Power over Ethernet Powered Device (PD) applications, replacing higher-R_DS(on) DPAK parts. Its 60V V_DS gives sufficient margin above 57V PoE+ maximum while the 15.5 mOhm on-resistance reduces heat in the PD front-end. Two channels in PG-TDSON-8-4 can be paralleled for lower total R_DS(on) at higher PoE++ power levels. AEC-Q101 qualification is over-spec but ensures long-term reliability in continuous-operation telecom and networking equipment.
Recommended
LED Driver High-Side Switch
The IPG20N06S415ATMA2 operates as a high-side PWM switch in automotive and architectural LED drivers, including DRL, interior ambient lighting, and stage lighting. The 60V V_DS supports 24V and 48V LED strings, and the 15.5 mOhm R_DS(on) keeps switching losses minimal at 1 kHz PWM frequencies. Dual channels allow independent control of two LED strings (e.g., RGB or dual-color) in a single PG-TDSON-8-4 package, simplifying board layout. The 100% avalanche rating provides robustness against inductive kickback from the LED string wiring harness.
Recommended
Recommended Products Summary
Engineering reference data for IPG20N06S415ATMA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPG20N06S415ATMA1 | IPG20N06S4-15 | IPD50N06S409ATMA2 | BSC050N04LSGATMA1 | IAUC120N04S6L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-4 (Dual Super S08) | PG-TDSON-8-4 (Dual Super S08) - same | PG-TDSON-8-4 (Dual Super S08) - same | PG-TDSON-8-4 (Dual Super S08) - same | PG-TDSON-8 (Super S08) - same family | PG-TDSON-8-4 family - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 50 A | 50 A (single channel) | 120 A (single channel) |
| R_DS(on) max at 10V VGS | 15.5 mOhm | 15.5 mOhm | 15.5 mOhm | 9.4 mOhm | 5.0 mOhm | 1.5 mOhm |
| Channel Configuration | Dual N-channel | Dual N-channel | Dual N-channel | Dual N-channel | Single N-channel | Single N-channel |
| Total Power Dissipation | 50 W | 50 W | 50 W | 60 W | 62.5 W | 100 W |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Dual N-channel MOSFET in single PG-TDSON-8-4 footprint (vs Discrete dual-DPAK approach)
- 100% avalanche-tested ruggedness (vs BSC050N04LSGATMA1 (single N-channel 40V))
- AEC-Q101 qualification with 175C junction rating (vs Industrial-grade dual MOSFETs from generic suppliers)
Design Notes
Estimated: at 20A continuous per channel and 15.5 mOhm R_DS(on), each MOSFET dissipates approximately P = I^2 x R = 400 x 0.0155 = 6.2 W, for a dual-channel total of ~12.4 W at maximum continuous rating. The PG-TDSON-8-4 package has a typical RthJA of 40-50 C/W on a 4-layer 1-oz-copper 1-square-inch pad, so junction-to-ambient rise is approximately 250-310 C - well above the 175 C maximum. Designers must either derate current to 8-10A per channel or expand PCB copper area (use 2-oz copper and 2+ square inches of drain pad copper) to keep Tj below 150 C in continuous operation. Always measure actual case temperature in the final assembly.
The PG-TDSON-8-4 package dissipates heat primarily through the exposed top-side pad, which must be soldered to a substantial copper pour on the top layer of the PCB. Recommended layout: minimum 1 x 1 inch (25 x 25 mm) copper area on the drain pad, with thermal vias (0.3 mm diameter, 1 mm pitch) connecting to inner-layer copper ground planes. Place gate-drive traces on the bottom layer to minimize coupling to the power loop. Use wide source-sense traces (Kelvin connection) for accurate current sensing if the source pin is used for current monitoring.
Do not drive the gate of IPG20N06S415ATMA2 with logic-level (3.3V or 5V) GPIO - the device requires 10V V_GS for full enhancement to achieve the rated 15.5 mOhm R_DS(on). At 5V V_GS the on-resistance may be 2-3x higher, leading to unexpected thermal stress. Use a dedicated gate driver IC (such as the 2EDB7259KXUMA1 for isolated drive) or a discrete charge pump for 10V gate drive. Also, do not exceed the V_GS absolute maximum of +/-20V - add a 16-18V Zener clamp between gate and source for protection against gate-drive transients.
In H-bridge or half-bridge configurations using the dual N-channel arrangement, minimize the high-current power loop by placing the two MOSFETs and the bus capacitor in a tight loop. Use a 4-layer PCB with the inner layer as a continuous ground plane; this reduces parasitic inductance in the switching loop and limits voltage overshoot during turn-off. For switching frequencies above 100 kHz, keep gate-drive traces short (<20 mm) and use a dedicated gate-return path adjacent to the gate trace to minimize gate-loop inductance.
When using IPG20N06S415ATMA2 in PWM applications (motor drive, synchronous rectifier), the high dv/dt at the switching node (up to 5 V/ns) can couple through the Miller capacitance (Cgd) into the gate drive. Add a 10-100 ohm gate-source resistor to dampen the Miller plateau and prevent parasitic turn-on. If the application has very high dv/dt (>10 V/ns), consider a negative gate-drive bias of -3 to -5V during off-state to keep the channel firmly off. Always probe the gate waveform with a low-inductance ground spring in the final circuit verification.
Compliance Information
RoHS compliant per Infineon product page; AEC-Q101 automotive qualified (note: AEC-Q100 vs AEC-Q101 - this part is AEC-Q101 which is the automotive-discrete equivalent of AEC-Q100 for ICs); lead-free reflow compatible per MSL1 rating up to 260 C peak; halogen-free status not explicitly stated in verified data.
