IPG20N10S4L35ATMA1 vs IPG20N04S4L11ATMA1 Comparison

Detailed side-by-side comparison of IPG20N10S4L35ATMA1 by Infineon and IPG20N04S4L11ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Active

Specification Comparison

Parameter IPG20N10S4L35ATMA1 IPG20N04S4L11ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPG20N10S4L35ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (V<sub>DSS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at 25°C 20 A —
R<sub>DS(on)</sub> Max 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: typical Vgs(th) value] —
Power Dissipation (P<sub>D</sub>) 43 W —
Operating Temperature 175°C max junction —
Mounting Type Surface Mount Surface Mount
Package / Case PG-TDSON-8-4 (8-Pin TDSON EP) —
Automotive Qualification AEC-Q101 AEC-Q101 Qualified
MSL Level MSL1 (up to 260°C peak reflow) 1 (260C peak reflow)
Series OptiMOS™, Automotive —
RoHS Status Compliant (Green Product) Compliant (Green Product)
Avalanche Rated 100% Avalanche Tested —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Operating Temperature Range — -55C to +175C
Package — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Technology — OptiMOS-T2 trench

Datasheets & Resources

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