IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
MPN: IPG20N04S4L11ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.76 | $7.60 |
| 100 | $0.65 | $65.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.46 | $460.00 |
| 5,000 | $0.39 | $1,950.00 |
Drop-in alternatives for IPG20N04S4L11ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPG20N04S4L08ATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IPG20N04S4L-11A
✅ Drop-In📋 Reference alternative (not in catalog)
IPG16N10S461AATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPG20N06S4L11AATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPG20N04S4L11ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ 25C | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm |
| Maximum Power Dissipation (PD) | 41 W |
| Operating Temperature Range | -55C to +175C |
| Package | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (260C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Status | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench |
IPG20N04S4L11ATMA1 Pin Configuration
| Pin 1 | G1 — Gate of MOSFET 1 (high-side or low-side switch) |
| Pin 2 | S1 — Source of MOSFET 1 |
| Pin 3 | D1 — Drain of MOSFET 1 |
| Pin 4 | G2 — Gate of MOSFET 2 |
| Pin 5 | S2 — Source of MOSFET 2 |
| Pin 6 | D2 — Drain of MOSFET 2 |
| Pin 7 | NC — Not connected (per datasheet pin configuration) |
| Pin 8 | NC — Not connected (per datasheet pin configuration) |
| Pin EP | Thermal Pad — Exposed pad - thermal substrate, must be soldered for rated power dissipation |
Safe Operating Area (SOA) - per channel, TC=25C
Typical Applications
IPG20N04S4L11ATMA1 is suitable for 6 applications: Automotive 12V/24V BLDC Motor Drive, Synchronous Rectifier in DC-DC Converters, Electronic Power Steering (EPS) Half-Bridge, Solenoid and Valve Driver (Low-Side Switch), Battery Management Protection (BMS Discharge FET), LED Driver High-Side and Low-Side Switch.
Automotive 12V/24V BLDC Motor Drive
The IPG20N04S4L11ATMA1 fits automotive BLDC motor drives because its dual N-channel 40V/20A rating and 11.6 mOhm R<sub>DS(on)</sub> directly support half-bridge and three-phase inverter topologies on 12V or 24V buses. Placed in the classic 3-phase bridge feeding the stator windings, each leg switches up to 20A continuous at low R<sub>DS(on)</sub>, minimizing conduction loss and keeping the die below 175C junction at typical 5-10A motor currents. The AEC-Q101 qualification ensures reliability for body, chassis, and powertrain BLDC applications such as cooling fans, water pumps, and HVAC blowers.
Recommended
Synchronous Rectifier in DC-DC Converters
The IPG20N04S4L11ATMA1 is ideal as the synchronous-rectifier (low-side) MOSFET in 12V-to-3.3V/5V buck converters because both N-channels can be paralleled or used independently to drop conduction loss. With logic-level VGS(th) and 11.6 mOhm R<sub>DS(on)</sub> at VGS=10V, the device pairs naturally with a controller like the BTS500801TEAAUMA1 or IRS2008STRPBF. Compared to a Schottky diode rectifier, this MOSFET halves the rectifier loss at 10A output and enables efficiencies above 95% in non-isolated point-of-load designs.
Recommended
Electronic Power Steering (EPS) Half-Bridge
The IPG20N04S4L11ATMA1 is suited to EPS half-bridge stages where reliability and compact footprint are mandatory. The dual-die PG-TDSON-8-4 package allows one half-bridge (one high-side + one low-side FET) to be implemented with a single Infineon part, halving PCB area vs two DPAKs. The 11.6 mOhm R<sub>DS(on)</sub> and 100% avalanche rating handle the regenerative braking current pulses during EPS assist transients, while AEC-Q101 qualification meets automotive functional-safety requirements for steering systems.
Recommended
Solenoid and Valve Driver (Low-Side Switch)
The IPG20N04S4L11ATMA1 fits low-side solenoid and valve drivers because each of its two N-channels can switch 20A inductive loads at 24V with full avalanche ruggedness. The 41W power dissipation in PG-TDSON-8-4 with proper copper heat-sinking supports continuous solenoid hold currents up to 5-10A. Compared to BJT Darlington drivers, this MOSFET avoids the 1.5V VCE(sat) loss and runs cool, while logic-level VGS permits direct PWM from 3.3V or 5V microcontrollers via a small gate-driver stage.
Recommended
Battery Management Protection (BMS Discharge FET)
The IPG20N04S4L11ATMA1 works as a back-to-back or single discharge-protection FET in 12V Li-ion battery management systems. Its 40V VDS, 20A continuous ID, and 11.6 mOhm R<sub>DS(on)</sub> provide low-loss disconnect for 12V LiFePO4 packs up to 100A parallel configurations. The AEC-Q101 rating and 175C junction tolerance ensure reliability in harsh automotive underhood environments, and the dual-die layout allows redundant overcurrent protection in safety-critical BMS designs.
Recommended
LED Driver High-Side and Low-Side Switch
The IPG20N04S4L11ATMA1 fits automotive LED headlamp and tail-light PWM drivers because both N-channels provide high-side (with bootstrap) and low-side switch capability in a single 5x6mm PG-TDSON-8-4 package. At 1-2A continuous LED currents the 11.6 mOhm R<sub>DS(on)</sub> keeps dissipation well below 0.1W, eliminating the heatsink requirement. The logic-level gate threshold supports direct microcontroller PWM up to 20kHz, enabling flicker-free dimming for DRL and matrix-beam headlamp systems.
Recommended
Recommended Products Summary
Engineering reference data for IPG20N04S4L11ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPG20N04S4L08ATMA1 | IPG20N04S4L-11A | IPG16N10S461AATMA1 | IPG20N06S4L11AATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 100 V | 60 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 16 A | 20 A |
| R<sub>DS(on)</sub> Max @ VGS=10V | 11.6 mOhm | 8 mOhm | 11.6 mOhm | [DATA_NEEDED] | 11.6 mOhm |
| Power Dissipation (PD) | 41 W | 41 W | 41 W | [DATA_NEEDED] | 41 W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 | OptiMOS | OptiMOS-T2 |
| Unit Price (1 pc, ref) | $0.85 | $0.95 | $0.85 | $1.10 | $0.92 |
Key Differentiators
- Lower R<sub>DS(on)</sub> drop-in upgrade available (vs IPG20N04S4L08ATMA1)
- Higher VDS headroom with same footprint (vs IPG20N06S4L11AATMA1)
- Higher VDS option for HV bus applications (vs IPG16N10S461AATMA1)
Design Notes
Estimated: at 1A per channel continuous (2A total), VGS=10V, R<sub>DS(on)</sub>_max=11.6 mOhm, each channel dissipates P=I^2*R=1^2*0.0116=11.6 mW, well below the 41W rated package dissipation. At maximum 20A per channel in DC operation the die dissipation is P=20^2*0.0116=4.64W, requiring copper pour plus thermal vias to the PG-TDSON-8-4 exposed pad to maintain TJ below 175C. The PG-TDSON-8-4 has theta_JA in the 50-65 C/W range on a standard 1oz 4-layer JEDEC test board, so calculate junction rise at your specific PCB copper layout, not the datasheet floor value.
Layout the PG-TDSON-8-4 exposed pad with a contiguous copper pour of at least 100mm^2 on top and bottom layers, stitched with 0.3mm thermal vias in a 1.2mm grid. Minimize the high-current drain-source loop area by placing input capacitors and the MOSFET drain terminal within 5mm of each other; this suppresses inductive voltage spikes during the 40V-rated VDS turn-off transient. Use a Kelvin-source connection where the gate-driver return traces are routed directly to the source pin, separate from the power-source path, to avoid gate-ringing at high di/dt switching edges.
Do not exceed the 40V VDS rating even under transient conditions; load-dump on 24V automotive rails can exceed 60V and requires a TVS clamp or transient suppressor upstream. Never drive the gate above the +/-20V VGS absolute maximum, which can permanently damage the thin gate oxide of this logic-level OptiMOS-T2 part. For half-bridge configurations, add proper dead-time in the controller firmware to prevent shoot-through currents that can exceed 100A peak during the cross-conduction window and destroy both dies.
Compliance Information
Infineon OptiMOS-T2 family, AEC-Q101 qualified for automotive applications, MSL1 rated for 260C peak reflow, 100% avalanche tested. RoHS compliant per datasheet Green Product marking.
