IPG20N10S4L35ATMA1 vs IPG20N04S4L11ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N10S4L35ATMA1 dari Infineon dan IPG20N04S4L11ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N10S4L35ATMA1 IPG20N04S4L11ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N10S4L35ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (V<sub>DSS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at 25°C 20 A —
R<sub>DS(on)</sub> Max 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: typical Vgs(th) value] —
Power Dissipation (P<sub>D</sub>) 43 W —
Suhu Kerja 175°C max junction —
Tipe Mounting Surface Mount Surface Mount
Paket / Case PG-TDSON-8-4 (8-Pin TDSON EP) —
Automotive Qualification AEC-Q101 AEC-Q101 Qualified
Level MSL MSL1 (up to 260°C peak reflow) 1 (260C peak reflow)
Series OptiMOS™, Automotive —
Status RoHS Compliant (Green Product) Compliant (Green Product)
Avalanche Rated 100% Avalanche Tested —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Rentang Suhu Kerja — -55C to +175C
Paket — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Technology — OptiMOS-T2 trench

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