IPG20N10S4L35ATMA1 vs IPG20N04S4L11ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S4L35ATMA1 disebabkan oleh Infineon dan IPG20N04S4L11ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N10S4L35ATMA1 IPG20N04S4L11ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N10S4L35ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (V<sub>DSS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at 25°C 20 A —
R<sub>DS(on)</sub> Max 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: typical Vgs(th) value] —
Power Dissipation (P<sub>D</sub>) 43 W —
Suhu Operasi 175°C max junction —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case PG-TDSON-8-4 (8-Pin TDSON EP) —
Automotive Qualification AEC-Q101 AEC-Q101 Qualified
Aras MSL MSL1 (up to 260°C peak reflow) 1 (260C peak reflow)
Series OptiMOS™, Automotive —
Status RoHS Compliant (Green Product) Compliant (Green Product)
Avalanche Rated 100% Avalanche Tested —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Gambaran Suhu Operasi — -55C to +175C
Kemasan — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Technology — OptiMOS-T2 trench

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