IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 Comparison

Detailed side-by-side comparison of IPL60R210P6AUMA1 by Infineon and IPL60R180P6AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL60R210P6AUMA1 IPL60R180P6AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.92
Manufacturer Infineon Technologies —
Part Number IPL60R210P6AUMA1 —
Series CoolMOS™ P6 —
FET Type N-Channel —
Technology MOSFET (Superjunction / CoolMOS™) CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (Vdss) 600 V —
Continuous Drain Current (Id) @ Tc=25°C 19.2 A —
On-Resistance (RDS(on)) max 210 mΩ —
Power Dissipation (Pd) @ Tc=25°C 151 W —
Package PG-VSON-4 (ThinPAK) Surface Mount PG-VSON-4 (Thin-PAK) surface mount
Mounting Type Surface Mount Surface Mount
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Operating Temperature Range [DATA_NEEDED: Tj max / operating range] —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel —
Packing Quantity [DATA_NEEDED: reel qty] —
Drain-Source Voltage (VDS) — 600 V
Gate-Source Voltage (VGS) — -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C — 22.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V — 180 mΩ
Power Dissipation (Ptot) at Tc=25°C — 176 W
Operating Junction Temperature Range — -55 °C to +150 °C
Storage Temperature Range — -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V (typical 3.0 V)
MSL (Moisture Sensitivity Level) — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes

Datasheets & Resources

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