IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 比較
詳細な並列比較: IPL60R210P6AUMA1 メーカー: Infineon および IPL60R180P6AUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPL60R210P6AUMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.92 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPL60R210P6AUMA1 | — |
| Series | CoolMOS™ P6 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Superjunction / CoolMOS™) | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 19.2 A | — |
| On-Resistance (RDS(on)) max | 210 mΩ | — |
| Power Dissipation (Pd) @ Tc=25°C | 151 W | — |
| パッケージ | PG-VSON-4 (ThinPAK) Surface Mount | PG-VSON-4 (Thin-PAK) surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| 動作温度範囲 | [DATA_NEEDED: Tj max / operating range] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| Packaging | Tape & Reel | — |
| Packing Quantity | [DATA_NEEDED: reel qty] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| 動作接合温度範囲 | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V (typical 3.0 V) |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |