IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 Vergleich
Detaillierter Direktvergleich von IPL60R210P6AUMA1 von Infineon und IPL60R180P6AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPL60R210P6AUMA1 - 600V CoolMOS P6 MOSFET, 19.2A, 210mΩ | Infineon
IPL60R210P6AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPL60R210P6AUMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,92 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPL60R210P6AUMA1 | — |
| Series | CoolMOS™ P6 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Superjunction / CoolMOS™) | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 19.2 A | — |
| On-Resistance (RDS(on)) max | 210 mΩ | — |
| Power Dissipation (Pd) @ Tc=25°C | 151 W | — |
| Gehäuse | PG-VSON-4 (ThinPAK) Surface Mount | PG-VSON-4 (Thin-PAK) surface mount |
| Montageart | Surface Mount | Surface Mount |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max / operating range] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Packaging | Tape & Reel | — |
| Packing Quantity | [DATA_NEEDED: reel qty] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V (typical 3.0 V) |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |