IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 对比
详细并排对比 IPL60R210P6AUMA1 出自 Infineon 和 IPL60R180P6AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPL60R210P6AUMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $1.92 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPL60R210P6AUMA1 | — |
| Series | CoolMOS™ P6 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Superjunction / CoolMOS™) | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 19.2 A | — |
| On-Resistance (RDS(on)) max | 210 mΩ | — |
| Power Dissipation (Pd) @ Tc=25°C | 151 W | — |
| 封装 | PG-VSON-4 (ThinPAK) Surface Mount | PG-VSON-4 (Thin-PAK) surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| 工作温度范围 | [DATA_NEEDED: Tj max / operating range] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Packaging | Tape & Reel | — |
| Packing Quantity | [DATA_NEEDED: reel qty] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| 工作结温范围 | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V (typical 3.0 V) |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |