IPL65R070C7AUMA1 vs IPD70R1K4P7SAUMA1 Comparison
Detailed side-by-side comparison of IPL65R070C7AUMA1 by Infineon and IPD70R1K4P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R070C7AUMA1
IPL65R070C7AUMA1 - 650V 70mΞ© CoolMOS C7 MOSFET | Infineon
IPL65R070C7AUMA1 β Active
Specification Comparison
| Parameter | IPL65R070C7AUMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | β |
| Technology | Superjunction N-Channel MOSFET | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID) at TC=25Β°C | 28 A | β |
| Continuous Drain Current (ID) at TC=100Β°C | [DATA_NEEDED: ID at TC=100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΞ© (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) at TC=25Β°C | 169 W | β |
| Avalanche Energy (EAS) | 171 mJ | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55C to +150C |
| Package | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | β |
| Channel Type | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Part Family | β | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | β | 4 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=10V, ID | β | 1.4 ohm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | β | 23 W |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | β | Yes (100% avalanche tested) |
| ESD Protection | β | Integrated (per datasheet) |