IPL65R070C7AUMA1 vs IPD70R1K4P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R070C7AUMA1 sa pamamagitan ng Infineon at IPD70R1K4P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 ✓ Nakahanda
Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL65R070C7AUMA1 IPD70R1K4P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 —
Technology Superjunction N-Channel MOSFET Superjunction (CoolMOS P7)
Drain-Source Voltage (VDS) 650 V 700 V
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
Temperature ng Junction na Operasyon -55°C to +150°C -55C to +150C
Packhaging PG-VSON-4 (surface mount) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] —
Part Family — CoolMOS P7 (700V Superjunction)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 4 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V, ID — 1.4 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Power Dissipation (Ptot) at Tc=25C — 23 W
Bilang ng Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (100% avalanche tested)
ESD Protection — Integrated (per datasheet)

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