IPL65R070C7AUMA1 vs IPD70R1K4P7SAUMA1 Comparaison
Comparaison détaillée côte à côte de IPL65R070C7AUMA1 par Infineon et IPD70R1K4P7SAUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPL65R070C7AUMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,68 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Technology | Superjunction N-Channel MOSFET | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Température de jonction en fonctionnement | -55°C to +150°C | -55C to +150C |
| Boîtier | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| Nombre de broches | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (100% avalanche tested) |
| ESD Protection | — | Integrated (per datasheet) |