IPL65R070C7AUMA1 vs IPD70R1K4P7SAUMA1 Comparação
Comparação detalhada lado a lado de IPL65R070C7AUMA1 por Infineon e IPD70R1K4P7SAUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPL65R070C7AUMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,68 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Technology | Superjunction N-Channel MOSFET | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Temperatura de junção de operação | -55°C to +150°C | -55C to +150C |
| Encapsulamento | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| Contagem de pinos | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (100% avalanche tested) |
| ESD Protection | — | Integrated (per datasheet) |