IPL65R115CFD7AUMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPL65R115CFD7AUMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPL65R115CFD7AUMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | P-Channel |
| Technology | CoolMOS CFD7 (Superjunction) | OptiMOS (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 24 A | — |
| Power Dissipation (PD, Tc) | 144 W | — |
| On-State Resistance (RDS(on)) | 115 mΩ at VGS=10V, ID=9.7A | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate-Source Threshold (VGS(th)) | 3.5 V (typ) | — |
| Body Diode | Integrated Fast Recovery | — |
| Operating Temperature Range | -55 °C to +150 °C (TJ) | -55 C to +175 C (TJ) |
| Package | PG-VSON-4 (VSON-4 EP) | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Package / Case | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |