IPL65R115CFD7AUMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPL65R115CFD7AUMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R115CFD7AUMA1
IPL65R115CFD7AUMA1 - 650V 24A 115mΞ© CoolMOS CFD7 | Infineon
IPL65R115CFD7AUMA1 β Active
Specification Comparison
| Parameter | IPL65R115CFD7AUMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.70 | $1.31 |
| FET Type | N-Channel | P-Channel |
| Technology | CoolMOS CFD7 (Superjunction) | OptiMOS (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 650 V | β |
| Continuous Drain Current (ID, Tc) | 24 A | β |
| Power Dissipation (PD, Tc) | 144 W | β |
| On-State Resistance (RDS(on)) | 115 mΞ© at VGS=10V, ID=9.7A | β |
| Gate-Source Voltage (VGS) | Β±20 V (max) | β |
| Gate-Source Threshold (VGS(th)) | 3.5 V (typ) | β |
| Body Diode | Integrated Fast Recovery | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | -55 C to +175 C (TJ) |
| Package | PG-VSON-4 (VSON-4 EP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |