IPL65R115CFD7AUMA1 vs IPB110P06LMATMA1 Perbandingan
Perbandingan bersamaan detil IPL65R115CFD7AUMA1 dari Infineon dan IPB110P06LMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPL65R115CFD7AUMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | P-Channel |
| Technology | CoolMOS CFD7 (Superjunction) | OptiMOS (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 24 A | — |
| Power Dissipation (PD, Tc) | 144 W | — |
| On-State Resistance (RDS(on)) | 115 mΩ at VGS=10V, ID=9.7A | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate-Source Threshold (VGS(th)) | 3.5 V (typ) | — |
| Body Diode | Integrated Fast Recovery | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | -55 C to +175 C (TJ) |
| Paket | PG-VSON-4 (VSON-4 EP) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Paket / Case | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |