IPL65R115CFD7AUMA1 vs IPB110P06LMATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R115CFD7AUMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPL65R115CFD7AUMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | P-Channel |
| Technology | CoolMOS CFD7 (Superjunction) | OptiMOS (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 24 A | — |
| Power Dissipation (PD, Tc) | 144 W | — |
| On-State Resistance (RDS(on)) | 115 mΩ at VGS=10V, ID=9.7A | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate-Source Threshold (VGS(th)) | 3.5 V (typ) | — |
| Body Diode | Integrated Fast Recovery | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ) | -55 C to +175 C (TJ) |
| Packhaging | PG-VSON-4 (VSON-4 EP) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Packhaging / Kaso | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |