IPN95R3K7P7ATMA1 vs IPN70R1K4P7SATMA1 Comparison

Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IPN70R1K4P7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Active

Specification Comparison

Parameter IPN95R3K7P7ATMA1 IPN70R1K4P7SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 950 V —
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) Superjunction (CoolMOS P7)
Package PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (3-pin + tab, surface mount)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C —
RoHS Status Compliant Compliant
Lead-Free Yes —
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Product Series — CoolMOS P7
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
Operating Temperature Range — -55C to +150C (TJ)
Configuration — Single with built-in diode
Pin Count — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)

Datasheets & Resources

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