IPN95R3K7P7ATMA1 vs IPN70R1K4P7SATMA1 比較
詳細並排比較 IPN95R3K7P7ATMA1 由 Infineon 與 IPN70R1K4P7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN95R3K7P7ATMA1 | IPN70R1K4P7SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | Superjunction (CoolMOS P7) |
| 封裝 | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223 (3-pin + tab, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55 C to +150 C | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Series | — | CoolMOS P7 |
| Drain-Source Voltage (V(BR)DSS) | — | 700 V |
| Continuous Drain Current (ID) at TC | — | 4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 1.4 ohm class (per '1K4' suffix) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Power Dissipation (PD) at TC | — | 6.2 W |
| 工作溫度範圍 | — | -55C to +150C (TJ) |
| Configuration | — | Single with built-in diode |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | — | Yes (drop-in alternative to DPAK per datasheet) |