IPN95R3K7P7ATMA1 vs IPN70R1K4P7SATMA1 Perbandingan

Perbandingan bersamaan detil IPN95R3K7P7ATMA1 dari Infineon dan IPN70R1K4P7SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPN95R3K7P7ATMA1 IPN70R1K4P7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 950 V —
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) Superjunction (CoolMOS P7)
Paket PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (3-pin + tab, surface mount)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +150 C —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Product Series — CoolMOS P7
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
Rentang Suhu Kerja — -55C to +150C (TJ)
Configuration — Single with built-in diode
Jumlah Pin — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)

Spek dan Sumber

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