IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon
MPN: IPN70R1K4P7SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
| 3,000 | $0.48 | $1,440.00 |
Drop-in alternatives for IPN70R1K4P7SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPN70R1K4P7SATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IPD70R1K4P7SAUMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →IPD70R1K4P7ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPN80R4K5P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.3 / Unit
View Datasheet →IPN95R3K7P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.44 / Unit
View Datasheet →IPN60R2K0PFD7SATMA1
✅ Drop-In✓ In Stock
$0.28 / Unit
View Datasheet →IPN70R1K4P7SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 700 V |
| Continuous Drain Current (ID) at TC | 4 A |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) |
| Total Power Dissipation (PD) at TC | 6.2 W |
| Technology | Superjunction (CoolMOS P7) |
| Package | PG-SOT223 (3-pin + tab, surface mount) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) |
| Configuration | Single with built-in diode |
| Pin Count | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
IPN70R1K4P7SATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Drain — MOSFET drain; also connected to metal tab for thermal dissipation |
| Pin 3 | Source — MOSFET source |
Safe Operating Area (estimated, DC)
Typical Applications
IPN70R1K4P7SATMA1 is suitable for 6 applications: Smartphone/Tablet Travel Adapter, Auxiliary Power Supply for White Goods, LED Lighting Driver (Offline SSL), Industrial SMPS Module, Set-Top Box and Desktop PC Auxiliary Supply, Charging Adapter / Power Tool Charger.
Smartphone/Tablet Travel Adapter
The IPN70R1K4P7SATMA1 is engineered for sub-65 W universal-mains travel adapters where every cubic millimeter of PCB real estate matters. Its PG-SOT223 footprint lets designers replace a DPAK MOSFET with a smaller, equally thermally capable part, while the 700 V breakdown provides derating margin for 265 VAC rectified bus peaks around 375 V. The 1.4 ohm-class Rds(on) keeps primary-side conduction loss reasonable at 4 A peak current, and the CoolMOS P7 superjunction structure enables higher switching frequencies (65-130 kHz) that shrink the transformer and output filter size. Combined with valley-switching or quasi-resonant control, the part helps adapters meet DOE Level VI and EU CoC Tier 2 efficiency limits while staying within slim form factors like 30 x 30 x 15 mm.
Recommended
Auxiliary Power Supply for White Goods
White-goods auxiliary supplies (washing machines, refrigerators, dishwashers) need a robust primary-side switch that can withstand repetitive avalanche energy from the transformer's leakage inductance. The IPN70R1K4P7SATMA1's 700 V breakdown and integrated body diode handle hard-commutated flyback reset events with margin, while its PG-SOT223 package allows compact PCB integration near the appliance's main control board. The 4 A continuous drain current at TC and 6.2 W power dissipation support 5-15 W standby supplies that must run for years in high-temperature environments. The part's proven CoolMOS P7 ruggedness reduces field-failure rates versus older planar 600 V MOSFETs.
Recommended
LED Lighting Driver (Offline SSL)
Offline LED drivers for 5-40 W bulbs, downlights and tubes require a primary-side MOSFET that combines high voltage margin with low conduction loss at modest currents. The IPN70R1K4P7SATMA1 fits single-stage flyback or two-stage PFC+flyback LED driver topologies, with 700 V rating tolerating universal-mains input and 1.4 ohm Rds(on) keeping efficiency above 90% at 100-300 mA output currents. The PG-SOT223 footprint allows the MOSFET to be tucked next to the input inductor in space-constrained bulb form factors, and its integrated gate ESD protection simplifies the BOM by eliminating external Zener clamps.
Recommended
Industrial SMPS Module
Industrial DIN-rail and panel-mount SMPS modules in the 30-100 W class use the IPN70R1K4P7SATMA1 as a primary-side flyback switch. Its 700 V rating suits 24 VDC bus-fed and rectified 115/230 VAC input ranges, while the 4 A ID and 6.2 W PD rating allow designs up to roughly 50 W continuous output without active cooling. The CoolMOS P7 superjunction technology reduces switching loss versus planar MOSFETs, easing heatsink design and helping modules meet EN 55022 EMI limits with smaller filter stages. The PG-SOT223 package also gives layout engineers a DPAK-compatible thermal pad for efficient copper-pour heatsinking.
Recommended
Set-Top Box and Desktop PC Auxiliary Supply
Always-on standby supplies for set-top boxes, desktop PCs and home networking gear require a MOSFET that delivers high efficiency at very light loads while still handling brief overloads when downstream subsystems wake up. The IPN70R1K4P7SATMA1's CoolMOS P7 technology maintains low switching loss at 25-100 kHz, supporting burst-mode or adaptive-power operation that keeps standby consumption below 100 mW. The 700 V rating gives protection margin against transient line surges, and the PG-SOT223 footprint shrinks the BOM height versus DPAK parts, enabling ultra-low-profile internal mounting inside slim consumer enclosures.
Recommended
Charging Adapter / Power Tool Charger
Cordless power-tool chargers and small appliance charging docks require rugged primary-side switching capable of absorbing the energy stored in the flyback transformer's leakage inductance. The IPN70R1K4P7SATMA1 is rated for repetitive avalanche operation and integrates a robust body diode, making it a strong fit for 30-100 W charging bricks. The 700 V V(BR)DSS withstands reflected output stress at high line, while the 1.4 ohm-class Rds(on) keeps full-charge conduction loss low enough to maintain thermal margin inside sealed plastic housings with no fan.
Recommended
Recommended Products Summary
Engineering reference data for IPN70R1K4P7SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPN70R1K4P7SATMA1 | IPD70R1K4P7SAUMA1 | IPD70R1K4P7ATMA1 | IPN80R4K5P7ATMA1 | IPN95R3K7P7ATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT223 | PG-SOT223 | PG-SOT223/DPAK | PG-SOT223 | PG-SOT223 | PG-SOT223 | PG-SOT223 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V(BR)DSS) | 700 V | 700 V | 700 V | 700 V | 800 V | 950 V | 600 V |
| Continuous Drain Current (ID at TC) | 4 A | 4 A | 4 A | 4 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Static On-Resistance (RDS(on) class) | 1.4 ohm | 1.4 ohm | 1.4 ohm | 1.4 ohm | 4.5 ohm | 3.7 ohm | 2.0 ohm |
| Technology | CoolMOS P7 (Superjunction) | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 FD7 |
| Power Dissipation (PD at TC) | 6.2 W | 6.2 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Reel-Pack Suffix (procurement) | SATMA1 (T&R) | SATMA1 | SAUMA1 | ATMA1 | ATMA1 | ATMA1 | SATMA1 |
Key Differentiators
- 700 V breakdown with 1.4 ohm Rds(on) in PG-SOT223 footprint (vs IPN60R2K0PFD7SATMA1)
- Drop-in SOT-223 footprint for DPAK PCB layouts (vs IPD70R1K4P7ATMA1 (DPAK))
- CoolMOS P7 superjunction technology for higher switching frequencies (vs Planar 700 V MOSFETs (legacy))
Design Notes
The PG-SOT223 tab is the drain connection and also the primary thermal path. At full 4 A continuous drain current and PD = 6.2 W, the junction-to-ambient thermal resistance of the SOT-223 alone is too high to sustain operation without PCB copper heatsinking. Solder the tab to a drain copper pour of at least 1 cm2 of 2 oz copper (per manufacturer recommended land pattern), and add thermal vias to an internal plane. Estimated junction temperature at 4 A, 1.4 ohm Rds(on), TC = 25 C: TJ = 25 C + 4^2 * 1.4 * RthJA. Verify against the manufacturer's RthJA value before finalizing the layout.
Keep the high-dV/dt drain loop (drain tab -> transformer primary winding -> source return) as short and physically tight as possible to minimize radiated EMI. Route the gate drive trace away from the drain node and use a small gate resistor (10-47 ohm) to control ringing. For valley-switching or quasi-resonant flyback controllers, the low Qgd of the CoolMOS P7 simplifies the snubber design and lets you shrink the RC clamp network, reducing standby loss in DOE Level VI adapters.
Do not exceed the 700 V V(BR)DSS rating, even as a transient - validate that the worst-case reflected voltage plus bus voltage plus leakage spike stays below 90% of 700 V (i.e. under 630 V) with adequate margin. The integrated body diode has limited reverse-recovery performance and is not optimized for continuous hard commutation; if the topology stresses the body diode (e.g. hard-switched half-bridge), consider a part with a co-packaged SiC diode or a wider body-diode rated CoolMOS variant. Verify VGS drive levels stay within the datasheet's recommended 10 V typical to minimize Rds(on) variation.
Compliance Information
RoHS and REACH compliant per Infineon product page; not AEC-Q100 qualified (consumer/industrial grade). MSL Level 1 per JEDEC J-STD-020.
