IPN95R3K7P7ATMA1 vs IPN80R4K5P7ATMA1 Comparison

Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IPN80R4K5P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPN95R3K7P7ATMA1 IPN80R4K5P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 800 V
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) CoolMOS Superjunction (SJ)
Package PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (surface mount, 3-pin + tab)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C —
RoHS Status Compliant Compliant
Lead-Free Yes —
MSL Level [DATA_NEEDED: MSL rating] —
Product Family — CoolMOS P7
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

Datasheets & Resources

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