IPP075N15N3GXKSA1 vs IPP600N25N3GXKSA1 Comparison

Detailed side-by-side comparison of IPP075N15N3GXKSA1 by Infineon and IPP600N25N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP075N15N3GXKSA1 IPP600N25N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Package PG-TO220-3 (TO-220 through-hole) —
Mounting Type Through Hole Through Hole
Operating Temperature Range [DATA_NEEDED: junction operating temperature range] -55C to +175C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical value]
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Series — OptiMOS 3
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc=25C — 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C — 136 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Package / Case — TO-220-3 (PG-TO220-3-1)
Reverse Recovery Time (trr) — [DATA_NEEDED: trr typical value]
Lead Free Status — Lead Free / RoHS Compliant
Pin Count — 3 (Gate, Drain, Source)

Datasheets & Resources

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