IPP075N15N3GXKSA1 vs IPP600N25N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPP075N15N3GXKSA1 von Infineon und IPP600N25N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP075N15N3GXKSA1 IPP600N25N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,92 $1,62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Gehäuse PG-TO220-3 (TO-220 through-hole) —
Montageart Through Hole Through Hole
Betriebstemperaturbereich [DATA_NEEDED: junction operating temperature range] -55C to +175C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical value]
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Series — OptiMOS 3
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc=25C — 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C — 136 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gehäuse / Bauform — TO-220-3 (PG-TO220-3-1)
Reverse Recovery Time (trr) — [DATA_NEEDED: trr typical value]
Lead Free Status — Lead Free / RoHS Compliant
Pin-Anzahl — 3 (Gate, Drain, Source)

Datenblätter & Ressourcen

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