IPP600N25N3GXKSA1 vs IPD600N25N3GATMA1 Comparison

Detailed side-by-side comparison of IPP600N25N3GXKSA1 by Infineon and IPD600N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP600N25N3GXKSA1 IPD600N25N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.84
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 3 trench MOSFET
Drain-to-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc=25C 25 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V —
Power Dissipation (PD) at Tc=25C 136 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Package / Case TO-220-3 (PG-TO220-3-1) —
Mounting Type Through Hole Surface Mount (Tape & Reel)
Operating Temperature Range -55C to +175C (junction) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] —
Lead Free Status Lead Free / RoHS Compliant —
Pin Count 3 (Gate, Drain, Source) —
Part Series — OptiMOS 3
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Gate Threshold Voltage — [DATA_NEEDED: VGS(th) typical/min/max]
Operating Junction Temperature — -55 C to +175 C
Package — PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Lead Plating — Pb-free
RoHS Compliance — Compliant
Halogen Free — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Datasheets & Resources

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