IPP600N25N3GXKSA1 vs IPD600N25N3GATMA1 对比
详细并排对比 IPP600N25N3GXKSA1 出自 Infineon 和 IPD600N25N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP600N25N3GXKSA1 | IPD600N25N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 3 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| 封装 / 外壳 | TO-220-3 (PG-TO220-3-1) | — |
| 安装类型 | Through Hole | Surface Mount (Tape & Reel) |
| 工作温度范围 | -55C to +175C (junction) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| Part Series | — | OptiMOS 3 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| 栅极阈值电压 | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 工作结温 | — | -55 C to +175 C |
| 封装 | — | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| 无卤 | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |