IPT008N06NM5LFATMA1 vs IPT015N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IPT008N06NM5LFATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT008N06NM5LFATMA1 IPT015N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $3.10
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 / Linear FET —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc) 454 A 315 A
Pulsed Drain Current [DATA_NEEDED: pulsed ID] —
On-Resistance RDS(on) at VGS=10 V 0.8 mΩ —
Gate-Source Threshold Voltage VGS(th) 3.6 V (typ, 250 µA test) —
Power Dissipation (Tc) 278 W —
Operating Temperature Range -55 °C to +175 °C (TJ) -55 °C to +175 °C
Package PG-HSOF-8 (single, flat-lead) PG-HSOF-8-10 (9-pin, 8+tab)
Mounting Type Surface Mount Surface Mount
Gate Drive (recommended) 10 V (logic-level compatible above 4.5 V VGS) —
Technology Trench MOSFET (OptiMOS 5) OptiMOS trench, N-channel enhancement
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
REACH Status Compliant —
AEC-Q100 not_qualified (industrial-grade by default) —
FET Type — N-Channel
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Gate Drive Voltage (typ) — 10 V
Single Pulse Avalanche Energy — [DATA_NEEDED: EAS value]

Datasheets & Resources

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