IPT008N06NM5LFATMA1 vs IPT015N10NF2SATMA1 Vergleich
Detaillierter Direktvergleich von IPT008N06NM5LFATMA1 von Infineon und IPT015N10NF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPT008N06NM5LFATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,40 | $3,10 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 / Linear FET | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc) | 454 A | 315 A |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55 °C to +175 °C |
| Gehäuse | PG-HSOF-8 (single, flat-lead) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Montageart | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS trench, N-channel enhancement |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gate Drive Voltage (typ) | — | 10 V |
| Einzelpuls-Avalanche-Energie | — | [DATA_NEEDED: EAS value] |