IPT008N06NM5LFATMA1 vs IPT015N10NF2SATMA1 对比
详细并排对比 IPT008N06NM5LFATMA1 出自 Infineon 和 IPT015N10NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ 量产中规格对比
| 参数 | IPT008N06NM5LFATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.40 | $3.10 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 / Linear FET | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc) | 454 A | 315 A |
| 脉冲漏极电流 | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| 工作温度范围 | -55 °C to +175 °C (TJ) | -55 °C to +175 °C |
| 封装 | PG-HSOF-8 (single, flat-lead) | PG-HSOF-8-10 (9-pin, 8+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS trench, N-channel enhancement |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gate Drive Voltage (typ) | — | 10 V |
| 单脉冲雪崩能量 | — | [DATA_NEEDED: EAS value] |