IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon
MPN: IPT012N08NF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.87 | $5.87 |
| 10 | $5.28 | $52.80 |
| 100 | $4.69 | $469.00 |
| 500 | $4.21 | $2,105.00 |
| 1,000 | $3.74 | $3,740.00 |
IPT012N08NF2SATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which current flows between drain and source when a positive gate-source voltage exceeding the threshold is applied. MOSFETs sit within the broader power-management semiconductor hierarchy: transistor -> power MOSFET -> discrete semiconductor -> power management building block. They are the workhorses of modern switched-mode power supplies (SMPS), motor drives, and battery-management systems because they switch fast, conduct with minimal resistance, and dissipate low gate drive power.
Key features of the IPT012N08NF2SATMA1 include an ultra-low typical RDS(on) of 1.2 mΩ at VGS=10V, a maximum drain-source voltage (VDS) of 80V, a continuous drain current of 39 A (Ta) / 351 A pulsed (Tc), and a maximum power dissipation of 300W at Tc. The HSOF-8-10 package exposes the drain tab for direct PCB heatsinking, achieving thermal resistance values suitable for >100W dissipation in well-laid-out boards. The part is qualified across -55 °C to +175 °C operating junction temperature.
Architecturally, the device uses Infineon's OptiMOS™-derived trench technology to achieve low figure-of-merit (FOM = RDS(on) × Qg), balancing conduction and switching losses. This makes it suitable for both hard-switched and soft-switched topologies such as synchronous rectification in telecom and server SMPS, where high di/dt and dv/dt immunity are required.
Typical applications include synchronous rectifiers in 48V telecom and server power supplies, high-current DC-DC converters, motor drives and H-bridges, battery management and protection FETs in 48V Li-ion systems, and hot-swap / OR-ing controllers. The wide safe operating area and avalanche rating make it suitable for industrial and automotive 12V/24V/48V buses.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10V for full RDS(on) specification; standard 12V gate drives are recommended. The exposed tab must be soldered to a sufficiently large copper area (typically >1 square inch) to keep junction temperature below 175 °C at full load, otherwise thermal derating will occur.
Drop-in alternatives for IPT012N08NF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPT012N08NF2SATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage VGS(th) typ.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC019N08NS5ATMA1
✅ Drop-In✓ In Stock
$1.78 / Unit
View Datasheet →IPB60R040CFD7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$5.19 / Unit
View Datasheet →NTMFS5C612NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7854TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPT012N08NF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 |
| Product Family | StrongIRFET™ |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at Ta | 39 A |
| Pulsed Drain Current (IDM) at Tc | 351 A |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V |
| Power Dissipation (PD) at Ta | 3.8 W |
| Power Dissipation (PD) at Tc | 300 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-HSOF-8-10 (HSOF) |
| Mounting Type | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) |
| Technology | Trench MOSFET (OptiMOS-derived) |
| RoHS Status | Compliant |
| Packing | Tape & Reel (T/R) |
IPT012N08NF2SATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1) |
| Pin 2 | Source — Source connection (pin 2) |
| Pin 3 | Source — Source connection (pin 3) |
| Pin 4 | Source — Source connection (pin 4) |
| Pin 5 | Source — Source connection (pin 5) |
| Pin 6 | Source — Source connection (pin 6) |
| Pin 7 | Source — Source connection (pin 7) |
| Pin 8 | Gate — Gate drive input |
| Pin Tab | Drain — Drain connection (exposed tab, top of package) |
Safe Operating Area (DC)
Typical Applications
IPT012N08NF2SATMA1 is suitable for 6 applications: 48V Telecom & Server Synchronous Rectifier, High-Current DC-DC Buck Converters, Battery Management & Protection (48V Li-ion), Industrial Motor Drives & H-Bridges, Hot-Swap & OR-ing Controllers, Solar Inverter & Energy Storage Switch.
48V Telecom & Server Synchronous Rectifier
The IPT012N08NF2SATMA1 is optimized for secondary-side synchronous rectification in 48V-input telecom and server SMPS, where its 1.2 mΩ typical RDS(on) and 39A continuous current rating minimize conduction loss. The 80V VDS rating provides comfortable headroom above the 48V nominal plus transient spikes typical of telecom environments. Placed on the secondary side of a forward or bridge converter, it replaces Schottky diodes to achieve >2% efficiency improvement. The HSOF-8 package enables top-side cooling via the exposed drain tab, critical for high-density 1U/2U server power supplies where PCB real estate is constrained.
Recommended
High-Current DC-DC Buck Converters
In high-current 12V/24V-to-low-voltage buck converters, the IPT012N08NF2SATMA1 serves as the low-side synchronous switch where its ultra-low RDS(on) of 1.2 mΩ at VGS=10V reduces crossover losses during hard switching. The 300W power dissipation capability at Tc supports the pulsed current demands of multi-phase VRM topologies for ASICs and FPGAs. Its 39A continuous rating enables single-FET-per-phase designs up to 30A output, eliminating the need for FET paralleling in many industrial and telecom applications.
Recommended
Battery Management & Protection (48V Li-ion)
The IPT012N08NF2SATMA1 is well-suited for 48V lithium-ion battery pack protection and load-switching applications. Its 80V VDS provides ample margin above nominal 48V (13S Li-ion at full charge = 54.6V), its 1.2 mΩ RDS(on) minimizes steady-state loss when carrying continuous pack current, and its 351A pulsed rating handles inrush during pre-charge events. The HSOF-8 package enables compact battery-pack PCBs while the top tab allows heatsinking to the pack chassis. Used as the high-side disconnect FET or in cell-balancing switches, it provides both low-loss operation and short-circuit robustness.
Recommended
Industrial Motor Drives & H-Bridges
In industrial motor drive H-bridges and three-phase inverters, the IPT012N08NF2SATMA1 delivers the high current and low conduction loss required for 24V/48V brushed and brushless DC motors. The 39A continuous / 351A pulsed current rating supports motors up to ~2kW, while the 1.2 mΩ RDS(on) reduces I²R heating during low-side conduction. The HSOF-8 package's exposed tab enables direct attachment to the motor housing or heatsink for thermal management. Infineon's strongIRFET™ technology also provides avalanche ruggedness for the back-EMF events typical of motor drive switching.
Recommended
Hot-Swap & OR-ing Controllers
The IPT012N08NF2SATMA1 serves as the pass-FET in 48V hot-swap and OR-ing applications for telecom and server equipment. Its 80V VDS rating supports nominal 48V rails with >1.6x transient margin, its 1.2 mΩ RDS(on) minimizes steady-state dissipation at full load current, and its 351A pulsed rating handles the inrush events of bulk-capacitor charging. The HSOF-8 package allows the pass-FET to be placed close to the connector for short current-loop layout. Combined with a hot-swap controller IC, it provides programmable inrush limiting and fast short-circuit protection.
Recommended
Solar Inverter & Energy Storage Switch
In solar micro-inverters and energy storage systems operating from 24V/48V battery banks, the IPT012N08NF2SATMA1 acts as the main switching FET or battery disconnect switch. Its 1.2 mΩ RDS(on) achieves >98% efficiency at typical loads, and its 80V VDS handles the open-circuit voltage of small PV strings. The wide -55 °C to +175 °C operating temperature range supports outdoor enclosure deployments from arctic to desert environments. The HSOF-8 package simplifies PCB layout in compact residential inverter designs.
Recommended
Recommended Products Summary
Engineering reference data for IPT012N08NF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC019N08NS5ATMA1 | NTMFS5C612NLT1G | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies (same) | onsemi | Infineon Technologies (same) |
| Package | PG-HSOF-8-10 (HSOF) | PG-HSOF-8-10 (same) | PQFN-8 / HSOF-8 equivalent (same) | PG-HSOF-8-10 (same) |
| VDS Max | 80 V | 80 V | 80 V | 600 V |
| RDS(on) Typ @ VGS=10V | 1.2 mΩ | 1.9 mΩ | 1.2 mΩ | 40 mΩ |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Key Differentiators
- Industry-leading 1.2 mΩ RDS(on) in 80V class (vs BSC019N08NS5ATMA1)
- Ultra-high pulsed current capability (vs IPB60R040CFD7ATMA1)
- Wide operating temperature range (vs NTMFS5C612NLT1G)
Design Notes
At IDS=39A and RDS(on)=1.2 mΩ, conduction loss is approximately 1.8W; at pulsed 100A it rises to 12W. The HSOF-8 package requires substantial PCB copper (typically >1 sq inch of 2oz copper on top and bottom layers) and the exposed drain tab MUST be soldered to maximize heat transfer. Estimated: with 2oz copper over 1 sq inch, theta_JA is ~40 °C/W, limiting continuous dissipation to ~3W before derating. For continuous >20A operation, attach the tab to an external heatsink or the chassis via thermal interface material.
Place the IPT012N08NF2SATMA1 with source pads directly on the high-current return path to minimize source inductance. The gate loop (gate-driver IC -> gate resistor -> gate pin -> source pin) must be kept small (typically <2 nH) to prevent gate ringing and dv/dt-induced false turn-on. Use a 10Ω gate resistor and a gate-source resistor of 10-100 kΩ to ensure the FET stays off during controller startup. The drain tab should be connected to a large copper pour on both top and inner layers with multiple thermal vias (typically 0.3mm diameter, 1mm pitch) to the bottom layer.
Do not operate the IPT012N08NF2SATMA1 above VDS=80V even for transient events; avalanche breakdown can permanently damage the device. Do not parallel multiple units without individual gate resistors — small RDS(on) mismatches (this part has ±20% tolerance) can cause current hogging. Ensure VGS never exceeds ±20V absolute maximum; a 12V gate drive with a 15V TVS clamp is recommended for protection. Finally, do not exceed 175 °C junction temperature — calculate worst-case Tj = Ta + (PD × theta_JA) under maximum ambient and full load.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — for automotive applications requiring AEC-Q100, consult Infineon for automotive-grade StrongIRFET™ variants. Halogen-free per JEDEC JS709.
