IPT015N10NF2SATMA1 vs BSC070N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and BSC070N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT015N10NF2SATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 (N-channel trench) |
| Gate Drive Voltage (typ) | 10 V | — |
| Single Pulse Avalanche Energy | [DATA_NEEDED: EAS value] | — |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Operating Junction Temperature Range | — | -55 C to +150 C |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |