IPT015N10NF2SATMA1 vs BSC070N10NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10NF2SATMA1 disebabkan oleh Infineon dan BSC070N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT015N10NF2SATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 (N-channel trench) |
| Gate Drive Voltage (typ) | 10 V | — |
| Tenaga Gesa tunggal padek | [DATA_NEEDED: EAS value] | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Gambaran Suhu Hubungan Operasi | — | -55 C to +150 C |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |