IPT015N10NF2SATMA1 vs ISC015N06NM5LF2ATMA1 Comparison

Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10NF2SATMA1 ISC015N06NM5LF2ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Operating Temperature Range -55 °C to +175 °C —
Package PG-HSOF-8-10 (9-pin, 8+tab) PG-TDSON-8 FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 5 Linear FET 2 (N-Channel)
Gate Drive Voltage (typ) 10 V —
Single Pulse Avalanche Energy [DATA_NEEDED: EAS value] —
RoHS Status Compliant —
Continuous Drain Current (ID) at Ta — 32 A
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate Threshold Voltage (VGS(th)) — 3 V
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Total Gate Charge (Qg) — 90 nC
Operating Junction Temperature — -55 °C to +175 °C
RoHS — Compliant

Datasheets & Resources

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