IPT015N10NF2SATMA1 vs ISC015N06NM5LF2ATMA1 比較
詳細並排比較 IPT015N10NF2SATMA1 由 Infineon 與 ISC015N06NM5LF2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ 啟用中規格比較
| 參數 | IPT015N10NF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TDSON-8 FL (5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 Linear FET 2 (N-Channel) |
| Gate Drive Voltage (typ) | 10 V | — |
| 單脈衝突崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 狀態 | Compliant | — |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 217 W |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3 V |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Total Gate Charge (Qg) | — | 90 nC |
| 工作接面溫度 | — | -55 °C to +175 °C |
| RoHS | — | Compliant |