IPT015N10NF2SATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil IPT015N10NF2SATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT015N10NF2SATMA1 ISC015N06NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-HSOF-8-10 (9-pin, 8+tab) PG-TDSON-8 FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 5 Linear FET 2 (N-Channel)
Gate Drive Voltage (typ) 10 V —
Energi Pulsa Tandai [DATA_NEEDED: EAS value] —
Status RoHS Compliant —
Continuous Drain Current (ID) at Ta — 32 A
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate Threshold Voltage (VGS(th)) — 3 V
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Total Gate Charge (Qg) — 90 nC
Suhu Hubung Kerja — -55 °C to +175 °C
RoHS — Compliant

Spek dan Sumber

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