IPT019N08N5ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IPT019N08N5ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT019N08N5ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 80V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 247 A | — |
| Continuous Drain Current (ID, Ta=25C) | 32 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 231 W | — |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55°C to +175°C (TJ) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 7 trench MOSFET |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Body Diode | Monolithic, third-quadrant optimized | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | Automotive Grade (per Infineon datasheet header) |
| Packing | Tape & Reel (TMA1 suffix) | — |
| Series | — | Automotive OptiMOS 7 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |