IPT019N08N5ATMA1 vs IAUCN08S7L033ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPT019N08N5ATMA1 tarafından Infineon ve IAUCN08S7L033ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPT019N08N5ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 80V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 247 A | — |
| Continuous Drain Current (ID, Ta=25C) | 32 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 231 W | — |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +175C | -55°C to +175°C (TJ) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 7 trench MOSFET |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Body Diode | Monolithic, third-quadrant optimized | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | Automotive Grade (per Infineon datasheet header) |
| Packing | Tape & Reel (TMA1 suffix) | — |
| Series | — | Automotive OptiMOS 7 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |