IPT019N08N5ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan
Perbandingan bersamaan detil IPT019N08N5ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT019N08N5ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 80V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 247 A | — |
| Continuous Drain Current (ID, Ta=25C) | 32 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 231 W | — |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55°C to +175°C (TJ) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 7 trench MOSFET |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Body Diode | Monolithic, third-quadrant optimized | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | Automotive Grade (per Infineon datasheet header) |
| Packing | Tape & Reel (TMA1 suffix) | — |
| Series | — | Automotive OptiMOS 7 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |