IPT019N08N5ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT019N08N5ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT019N08N5ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 80V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 247 A | — |
| Continuous Drain Current (ID, Ta=25C) | 32 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 231 W | — |
| Kemasan | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C | -55°C to +175°C (TJ) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 7 trench MOSFET |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Body Diode | Monolithic, third-quadrant optimized | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | Automotive Grade (per Infineon datasheet header) |
| Packing | Tape & Reel (TMA1 suffix) | — |
| Series | — | Automotive OptiMOS 7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |