IPT026N10N5ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPT026N10N5ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT026N10N5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Continuous Drain Current (ID, Ta) | 27 A | — |
| Maximum RDS(on) at VGS=10V | 2.6 mΩ | — |
| Maximum Power Dissipation (Tc=25°C) | 214 W | — |
| Package | PG-HSOF-8-1 (TOLL) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | — |
| Configuration | Single with built-in diode | Dual N-Channel (independent MOSFETs) |
| Number of Terminals | 8 | — |
| Technology | Trench (OptiMOS 5) | Trench MOSFET (OptiMOS 3) |
| RoHS Status | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: typical Qg] | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | — | -55 C to +175 C |
| Package / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |