IPT059N15N3ATMA1 vs IAUC120N06S5L015ATMA1 Comparison

Detailed side-by-side comparison of IPT059N15N3ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Active

Specification Comparison

Parameter IPT059N15N3ATMA1 IAUC120N06S5L015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $0.92
Transistor Type N-Channel MOSFET
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) max 150 V
Continuous Drain Current (ID) at TC=25°C 155 A
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ
Power Dissipation (PD) at TC=25°C 375 W
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical]
Package PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TDSON-8-43 (Surface Mount)
Mounting Type Surface Mount Surface Mount (exposed pad)
Operating Temperature Range -55 °C to +175 °C (TJ max 175 °C) -55C to +175C (Tj)
Pin Count 8 + exposed source tab
RoHS Status Compliant Compliant
MSL Level 1 [DATA_NEEDED: MSL level]
Automotive Qualified No (industrial grade; non-AEC-Q)
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, Tc=25C) 235 A
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ
Gate Charge (Qg, typ) 88 nC
Power Dissipation (PD, Tc=25C) 167 W
Automotive Qualification AEC-Q101 qualified
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A
Typical Application Automotive DC-DC, battery switches, motor drives

Datasheets & Resources

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