IPT059N15N3ATMA1 vs IAUC120N06S5L015ATMA1 Perbandingan

Perbandingan bersamaan detil IPT059N15N3ATMA1 dari Infineon dan IAUC120N06S5L015ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPT059N15N3ATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Paket PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TDSON-8-43 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount (exposed pad)
Rentang Suhu Kerja -55 °C to +175 °C (TJ max 175 °C) -55C to +175C (Tj)
Jumlah Pin 8 + exposed source tab —
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL level]
Automotive Qualified No (industrial grade; non-AEC-Q) —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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