IPT059N15N3ATMA1 vs IAUC120N06S5L015ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT059N15N3ATMA1 disebabkan oleh Infineon dan IAUC120N06S5L015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPT059N15N3ATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Kemasan PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TDSON-8-43 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount (exposed pad)
Gambaran Suhu Operasi -55 °C to +175 °C (TJ max 175 °C) -55C to +175C (Tj)
Kiraan Pin 8 + exposed source tab —
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Automotive Qualified No (industrial grade; non-AEC-Q) —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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